Electronics | |
Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application | |
Mahmoud Alashi1  Nandakishor Yadav1  KyuwonKen Choi1  | |
[1] Department of Electrical and Computer Engineering, 3301 South Dearborn Street, Siegel Hall, Illinois Institute of Technology, Chicago, IL 60616, USA; | |
关键词: internet of things (iot); autonomous vehicle; hemt; finfet; bti; nbti; pbti; charge-trapping; reliability; | |
DOI : 10.3390/electronics9030469 | |
来源: DOAJ |
【 摘 要 】
It is broadly accepted that the silicon-based CMOS has touched its scaling limits and alternative substrate materials are needed for future technology nodes. An Indium-Gallium-Arsenide (
【 授权许可】
Unknown