FUTURE TRENDS IN POWER ELECTRONIC DEVICES

Journal of Engineering Science (Chişinău)

Băjenescu, Titu-Marius I.¹ 

[1] Swiss Technology Association, Electronics Group Switzerland;

关键词: gan;    sic;    si vs sic;    igbt;    mosfet;    hemt;    hfet;    fet;    diamond power devices;   

DOI  :  10.5281/zenodo.3591592

来源: DOAJ

【 摘 要 】

The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new specifications such as high frequencies, high voltages, high temperatures and high current densities. All of this contributes in the strong development of power devices. To this end, separation techniques for low-resistivity films should be developed, as well as thick-film growth technologies, including hot filament CVD on insulating wafers. The article outlines the evolution of semiconductor manufacturing, current applications and perspective.

【 授权许可】

Unknown