Memtransistors Based on Non-Layered In2S3 Two-Dimensional Thin Films With Optical-Modulated Multilevel Resistance States and Gate-Tunable Artificial Synaptic Plasticity

IEEE Access

Yu Zhao¹  Daizhe Yu¹  Zhen Liu¹  Zhiyuan He²  Shanjie Li² 

[1] Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou, China;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, No. 5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China;

关键词: Memristors;    field effect transistors;    thin film devices;    electric resistance;   

DOI  :  10.1109/ACCESS.2020.3000589

来源: DOAJ

【 摘 要 】

Memtransistor, a hybrid structure that integrates the function of memristor and transistor, is a promising device prototype for the realization of complex neuromorphic learning owing to its diverse functionality and additional flexibility in emulating synaptic behaviors. Memtransistor of two-dimensional (2D) chalcogenide materials have received many interests as it has distinctive memristive mechanism quite different from conventional oxide memristors. Here, we report a memtransistor based on the two-dimensional thin films (2DTFs) of non-layered β-In₂S₃. The In₂S₃ 2DTFs grown by physical vapor deposition method have microscopically visible grain boundaries (GBs) formed by the stacking and interconnecting of 2D In₂S₃ flakes. The memtransistors of In₂S₃ 2DTFs show tunable bipolar resistive states with resistance ratio up to 10⁵, endurance over 200 cycles, and a retention time of 10⁴ s. Illumination of laser light from visible and near-infrared are able to induce intermediate resistance states in memtransistors, enabling optical-modulated multilevel memory storage. Also, the memtransistors are able to emulate the synaptic function of long-term potentiation (LTP) and long-term depression (LTD) with tunable synaptic weight in response to presynaptic stimuli of drain/gate pulses. Interestingly, the plasticity of LTP and LTD behavior can be switched in a highly tunable manner by simply varying the gate voltages. The diverse optoelectronic properties and controllable functionality of memtransistors based on the emerging 2D In₂S₃ offer a useful guide to potential application in electronic memory and artificial synapses.

【 授权许可】

Unknown