Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact

IEEE Journal of the Electron Devices Society

Abhinav Kranti¹  Jyi-Tsong Lin¹  Yi-Jie Chen¹  Wei-Tse Sun¹  Hung-Hsiu Lin¹  Nupur Navlakha² 

[1] Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan;Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, India;

关键词: 1T-DRAM;    doping-less;    capacitorless;    Schottky source/drain;    raised body;   

DOI  :  10.1109/JEDS.2019.2896412

来源: DOAJ

【 摘 要 】

In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from physical doping, the problems associated with random dopant fluctuations will be eliminated in the proposed doping-less topology. Our simulation results show that a programming window of 28.7 μA/μm at a gate length of 10 nm with the retention time of 466 ms at 27 °C and 79 ms at 85 °C can be achieved with the proposed doping-less 1T-DRAM, which is much better than a conventional charge-plasma based doping-less 1T DRAM.

【 授权许可】

Unknown