Numerical Modelling of the Czochralski Growth of β-Ga2O3

Crystals

Jürgen Schreuer¹  Zbigniew Galazka²  Wolfram Miller²  Klaus Böttcher² 

[1] Institute for Geology, Mineralogy and Geophysics, Ruhr University Bochum, 44801 Bochum, Germany;Leibniz Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany;

关键词: global simulation;    Ga2O3;    thermal stress;   

DOI  :  10.3390/cryst7010026

来源: DOAJ

【 摘 要 】

Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.

【 授权许可】

Unknown