Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Cell Reports Physical Science

Joe Willis¹  Wei Chen²  Xu Lian³  Xiangyu Xu⁴  Tien-Lin Lee⁴  Zhenni Yang⁵  Kelvin H.L. Zhang⁶  Lang Chen⁷  Jiaye Zhang⁸  David O. Scanlon⁸  Lai-Sen Wang⁸ 

[1] Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China;Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, UK;Thomas Young Centre, University College London, Gower Street, London WC1E 6BT, UK;Department of Chemistry, National University of Singapore, Singapore 117543, Singapore;Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, UK;Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, UK;Fujian Key Laboratory of Materials Genome, College of Materials, Xiamen University, Xiamen 361005, P.R. China;State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P.R. China;

关键词: wide-bandgap semiconductor;    Ga2O3;    electronic structure;    transparent conducting oxide;    work-function;   

DOI  :  

来源: DOAJ

【 摘 要 】

Summary: Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

【 授权许可】

Unknown