Combined Pulsed RF GD-OES and HAXPES for Quantified Depth Profiling through Coatings

Coatings

Patrick Chapon¹  Pia Dally²  Muriel Bouttemy²  Solène Béchu²  Arnaud Etcheberry²  Ben F. Spencer³ 

[1] HORIBA Scientific, 14 Boulevard Thomas Gobert, Passage Jobin Yvon, CS 45002, 91120 Palaiseau, France;Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, CEDEX, 78035 Versailles, France;Sir Henry Royce Institute and the Department of Materials, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, UK;

关键词: pulsed RF GD-OES;    XPS;    HAXPES;    depth profiling;    crater chemistry;    plasma-induced perturbation;   

DOI  :  10.3390/coatings11060702

来源: DOAJ

【 摘 要 】

Chemical characterization at buried interfaces is a real challenge, as the physico-chemical processes operating at the interface govern the properties of many systems and devices. We have developed a methodology based on the combined use of pulsed RF GD-OES (pulsed Radio Frequency Glow Discharge Optical Emission Spectrometry) and XPS (X-ray Photoelectron Spectroscopy) to facilitate the access to deeply buried locations (taking advantage of the high profiling rate of the GD-OES) and perform an accurate chemical diagnosis using XPS directly inside the GD crater. The reliability of the chemical information is, however, influenced by a perturbed layer present at the surface of the crater, hindering traditional XPS examination due to a relatively short sampling depth. Sampling below the perturbed layer may, however, can be achieved using a higher energy excitation source with an increased sampling depth, and is enabled here by a new laboratory-based HAXPES (Hard X-ray PhotoElectron Spectroscopy) (Ga-Kα, 9.25 keV). This new approach combining HAXPES with pulsed RF GD-OES requires benchmarking and is here demonstrated and evaluated on InP. The perturbed depth is estimated and the consistency of the chemical information measured is demonstrated, offering a new route for advanced chemical depth profiling through coatings and heterostructures.

【 授权许可】

Unknown