A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

IEEE Journal of the Electron Devices Society

Zhi Luo¹  Wanling Deng¹  Junkai Huang¹  Na Li¹  Weijing Wu² 

[1] Department of Electronic Engineering, Jinan University, Guangzhou, China;State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China;

关键词: Mobility model;    organic thin-film transistors;    temperature;    contact resistance;    hopping;    DC model;   

DOI  :  10.1109/JEDS.2020.2974031

来源: DOAJ

【 摘 要 】

Based on the device physics, a mobility model for organic thin-film transistors (OTFTs) is presented considering temperature and contact resistance. As a function of the surface potential, the mobility model including hopping mechanism is able to explain the dependence of temperature and gate bias. The contact resistance is also considered in order to extract the correct mobility. Furthermore, with the assumption that the trapped carrier concentration dominates Poisson's equation, and combining the mobility model, a DC compact model accounting for contact resistance and temperature is proposed suitable for the temperature scaling from 83 to 295K. Through the extensive comparisons between the model results and the numerical iteration or experimental data, the validity of the mobility and current models is strongly supported.

【 授权许可】

Unknown