Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability

Materials

Jaehoon Park¹  Jin-Hyuk Bae¹  Won-Ho Kim¹  Min-Hoi Kim¹  Chang-Min Keum¹  Sin-Doo Lee¹ 

[1] School of Electrical Engineering, Seoul National University, Seoul 151-600, Korea; E-Mails:

关键词: organic thin-film transistors;    stability;    polymer;    dielectrics;    hydroxyl group;   

DOI  :  10.3390/ma3063614

来源: mdpi

【 摘 要 】

We investigated the electrical stabilities of two types of pentacene-based organic thin-film transistors (OTFTs) with two different polymeric dielectrics: polystyrene (PS) and poly(4-vinyl phenol) (PVP), in terms of the interfacial charge depletion. Under a short-term bias stress condition, the OTFT with the PVP layer showed a substantial increase in the drain current and a positive shift of the threshold voltage, while the PS layer case exhibited no change. Furthermore, a significant increase in the off-state current was observed in the OTFT with the PVP layer which has a hydroxyl group. In the presence of the interfacial hydroxyl group in PVP, the holes are not fully depleted during repetitive operation of the OTFT with the PVP layer and a large positive gate voltage in the off-state regime is needed to effectively refresh the electrical characteristics. It is suggested that the depletion-limited holes at the interface, i.e., interfacial charge depletion, between the PVP layer and the pentacene layer play a critical role on the electrical stability during operation of the OTFT.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.