A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Applied Sciences

MaxC. Lemme¹  Vikram Passi¹  Thomas Zimmer²  Sebastien Fregonese²  Henri Happy³  Wei Wei³  Emiliano Pallecchi³  Soukaina Ben Salk³  Di Zhou³  Dalal Fadil³  Wlodek Strupinski⁴ 

[1] AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany;IMS Laboratory, CNRS UMR 5218, Université Bordeaux 1, 33400 Talence, France;University of Lille—IEMN CNRS UMR8520, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq, France;Warsaw University of Technology, Koszykowa 75, str., 00-662 Warsaw, Poland;

关键词: graphene;    microwave;    mmic;    integrated circuits;    active balun;    2d materials;   

DOI  :  10.3390/app10062183

来源: DOAJ

【 摘 要 】

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

【 授权许可】

Unknown