Temperature Dependence of Dielectric Properties of Ferroelectric Heterostructures with Domain-Provided Negative Capacitance

Nanomaterials

Maksim A. Pavlenko¹  Yuri A. Tikhonov¹  Anna G. Razumnaya¹  Igor A. Lukyanchuk¹  Valerii M. Vinokur² 

[1] Faculty of Physics, Southern Federal University, 344090 Rostov-on-Don, Russia;Terra Quantum AG, CH-9400 Rorschach, Switzerland;

关键词: ferroelectrics;    heterostructures;    domains;    negative capacitance;   

DOI  :  10.3390/nano12010075

来源: DOAJ

【 摘 要 】

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO₃/PbTiO₃/SrTiO₃ heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.

【 授权许可】

Unknown