Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

Applied Sciences

Shizuo Tokito¹  Rei Shiwaku²  Masataka Tamura²  Yasunori Takeda²  Hiroyuki Matsui²  Tomohide Murase³ 

[1] D Center, Mitsubishi Chemical Corporation, 1000 Kamoshida-cho, Aoba-ku, Yokohama, Kanagawa 227-8502, Japan;Research Center for Organic Electronics (ROEL), Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan;;Yokohama R&

关键词: organic transistor;    dual-gate;    carrier distribution;    simulation;   

DOI  :  10.3390/app8081341

来源: DOAJ

【 摘 要 】

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

【 授权许可】

Unknown