Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation

Materials

Si-Young Bae¹  Seong-Min Jeong¹  Myung-Hyun Lee¹  Yun-Ji Shin¹  Minh-Tan Ha¹  LeVan Lich² 

[1] Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju-si 52851, Korea;School of Materials Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Street, Hanoi 100000, Vietnam;

关键词: silicon carbide;    sic;    solution growth;    tssg;    external magnetic field;    helmholtz coils;    simulation;   

DOI  :  10.3390/ma13030651

来源: DOAJ

【 摘 要 】

Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal.

【 授权许可】

Unknown