Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth

Materials

Takeshi Yoshikawa¹  Hiroyuki Shibata²  Sakiko Kawanishi² 

[1] Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

关键词: silicon carbide;    in situ observation;    melt-back;    solution growth;    dislocations;   

DOI  :  10.3390/ma15051796

来源: DOAJ

【 摘 要 】

The melt-back process has a significant effect on the quality of solution-grown SiC crystals. However, the phenomena surrounding the SiC dissolution into the molten alloy during the melt-back process have not been clarified. In this study, the behavior of 4H-SiC dissolution into molten alloy was investigated by using high-temperature in situ observation and subsequent KOH etching, and the effects of different doping conditions and crystal polarity were studied. Local dissolutions with hexagonal pyramid-shape originating from threading screw dislocation (TSD) were observed on the C face of n-type SiC with light nitrogen doping. Our analysis of their behavior revealed that the process was governed by the spiral dissolution. In addition to the dissolution at TSD, local dissolutions at threading-edge dislocations were observed on the Si face of the same crystal. The shape of the local dissolution at the dislocation was significantly affected by the doping conditions and the polarity of the SiC crystal. This local dissolution may occur during the melt-back process, suggesting that it is important to promote the dissolution while maintaining a smooth interface through the selection of the seed crystal and by keeping the degree of interface undersaturation small.

【 授权许可】

Unknown