Indium-Zinc-Tin-Oxide Film Prepared by Reactive Magnetron Sputtering for Electrochromic Applications

Materials

Ke-Ding Li¹  Kao-Shuo Chang¹  Po-Wen Chen²  Sheng-Chuan Hsu²  Der-Jun Jan² 

[1] Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan;Division of Physics, Institute of Nuclear Energy Research, Taoyuan County 32546, Taiwan;

关键词: indium-zinc-tin-oxide (IZTO) film;    electrochromic device (ECD);    tungsten electrode film;    DC reactive magnetron sputtering;    cathodic arc plasma (CAP);   

DOI  :  10.3390/ma11112221

来源: DOAJ

【 摘 要 】

This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10⁻⁴ Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO₃ electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO₄/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm.

【 授权许可】

Unknown