N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

Nano-Micro Letters

Hiroki Kondo¹  Masaru Hori¹  Andrea Jagodar²  Johannes Berndt²  Eva Kovacevic²  Thomas Strunskus³  Elena Tatarova⁴  Gregor Filipič⁵  Neelakandan M. Santhosh⁵  Uroš Cvelbar⁵ 

[1] Department of Electrical Engineering and Computer Science, University of Nagoya;GREMI CNRS-University of Orleans;Institute for Materials Science, Christian Albrechts University Kiel;Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa;Jožef Stefan Institute;

关键词: Graphene;    Graphene nanowalls;    Plasma post-treatment;    Nitrogen incorporation;    Raman spectroscopy;    Vacancy defects;   

DOI  :  10.1007/s40820-020-0395-5

来源: DOAJ

【 摘 要 】

Abstract Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.

【 授权许可】

Unknown