Nano-Micro Letters | |
N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence | |
Hiroki Kondo1  Masaru Hori1  Andrea Jagodar2  Johannes Berndt2  Eva Kovacevic2  Thomas Strunskus3  Elena Tatarova4  Gregor Filipič5  Neelakandan M. Santhosh5  Uroš Cvelbar5  | |
[1] Department of Electrical Engineering and Computer Science, University of Nagoya;GREMI CNRS-University of Orleans;Institute for Materials Science, Christian Albrechts University Kiel;Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa;Jožef Stefan Institute; | |
关键词: Graphene; Graphene nanowalls; Plasma post-treatment; Nitrogen incorporation; Raman spectroscopy; Vacancy defects; | |
DOI : 10.1007/s40820-020-0395-5 | |
来源: DOAJ |
【 摘 要 】
Abstract Incorporating nitrogen (N) atom in graphene is considered a key technique for tuning its electrical properties. However, this is still a great challenge, and it is unclear how to build N-graphene with desired nitrogen configurations. There is a lack of experimental evidence to explain the influence and mechanism of structural defects for nitrogen incorporation into graphene compared to the derived DFT theories. Herein, this gap is bridged through a systematic study of different nitrogen-containing gaseous plasma post-treatments on graphene nanowalls (CNWs) to produce N-CNWs with incorporated and substituted nitrogen. The structural and morphological analyses describe a remarkable difference in the plasma–surface interaction, nitrogen concentration and nitrogen incorporation mechanism in CNWs by using different nitrogen-containing plasma. Electrical conductivity measurements revealed that the conductivity of the N-graphene is strongly influenced by the position and concentration of C–N bonding configurations. These findings open up a new pathway for the synthesis of N-graphene using plasma post-treatment to control the concentration and configuration of incorporated nitrogen for application-specific properties.
【 授权许可】
Unknown