Evaluation of nitrogen incorporation into bulk 4H-SiC grown on seeds of different orientation from optical absorption spectra

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Firsov, D.D.^1 ; Komkov, O.S.^1 ; Fadeev, A. Yu^1 ; Lebedev, A.O.^2

Micro- and Nanoelectronics Department, St. Petersburg Electrotechnical University LETI, 5 Professora Popova Street, St. Petersburg

197376, Russia^1

Dielectric and Semiconductors Physics Department, Ioffe Institute, 26 Polytekhnicheskaya Street, St.-Petersburg

194021, Russia^2

关键词: Absorption peaks;    Nitrogen concentrations;    Nitrogen incorporation;    Nitrogen-doping;    Optical absorption measurement;    Vapour transport;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012043/pdf
DOI  :  10.1088/1742-6596/741/1/012043

来源: IOP

【 摘 要 】

The effectiveness of n-type nitrogen doping of bulk 4H-SiC grown on seeds of different orientation is studied by optical absorption measurements. The 4H-SiC ingots have been grown by physical vapour transport (PVT), with nitrogen doping from the SiC source. The nitrogen concentration was determined at room temperature from the absorption peak intensity at 464 nm, with account for the degree of donor ionization. It has been shown that 4H-SiC ingots grown on Si (11-22) faces are significantly less doped by nitrogen than the ones grown on C (11-2-2).