Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Baranov, A.I.^1,2 ; Kleider, J.P.^2 ; Gudovskikh, A.S.^1,3 ; Darga, A.^2,4 ; Nikitina, E.V.^1 ; Egorov, A. Yu^5

St Petersburg Academic University, St Petersburg

194021, Russia^1

Group of Electrical Engineering of Paris (GeePs), Gif sur Yvette Cedex

91192, France^2

St Petersburg Electrotechnical University LETI, St Petersburg

197376, Russia^3

Sorbonne Universités, UPMC Univ Paris 06, UMR 8507, Paris, France^4

ITMO University, St Petersburg

197101, Russia^5

关键词: Admittance spectroscopies;    Defect levels;    Defect property;    Nitrogen content;    Nitrogen incorporation;    Si substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012077/pdf
DOI  :  10.1088/1742-6596/741/1/012077

来源: IOP

【 摘 要 】

Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.