On-Chip Thermal Insulation Using Porous GaN

Proceedings

Peter H. Griffin¹  Tongtong Zhu¹  Yingjun Liu¹  John C. Jarman¹  Rachel A. Oliver¹  Andrea De Luca²  Bogdan F. Spiridon²  Florin Udrea² 

[1] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK;Engineering Department, University of Cambridge, Cambridge CB3 0FA, UK;

关键词: GaN;    gallium nitride;    porous;    thermal conductivity;    thermal insulation;    3-omega;   

DOI  :  10.3390/proceedings2130776

来源: DOAJ

【 摘 要 】

This study focuses on the thermal characterization of porous gallium nitride (GaN) using
an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip
thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy
thermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsically
high thermal conductivity of the material. The results show one order of magnitude reduction in
thermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porous
materials. This achievement is encouraging in the quest for integrating sensors with opto-, powerand
RF-electronics on a single GaN chip.

【 授权许可】

Unknown