On-Chip Thermal Insulation Using Porous GaN

Proceedings

Jarman, John C.¹  Griffin, Peter H.²  Spiridon, Bogdan F.³  Liu, Yingjun⁴ 

[1] Author to whom correspondence should be addressed.;Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK;Engineering Department, University of Cambridge, Cambridge CB3 0FA, UK;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: GaN;    gallium nitride;    porous;    thermal conductivity;    thermal insulation;    3-omega;   

DOI  :  10.3390/proceedings2130776

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high-speed and high-accuracythermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsicallyhigh thermal conductivity of the material. The results show one order of magnitude reduction inthermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porousmaterials. This achievement is encouraging in the quest for integrating sensors with opto-, powerandRF-electronics on a single GaN chip.

【 授权许可】

CC BY