Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors

Yao-Chuan Tsai¹  Po-Jen Shih²  Cheng-Chih Hsu³  Ching-Liang Dai⁴  Wei-Ren Chen⁴ 

[1] Department of Bio-Industrial Mechatronics Engineering, National Chung Hsing University, Taichung 402, Taiwan;Department of Biomedical Engineering, National Taiwan University, Taipei 106, Taiwan;Department of Electro-Optical Engineering, National United University, Miaoli 360, Taiwan;Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan;

关键词: magnetic microsensor;    magnetic field effect transistor;    CMOS;    MEMS;   

DOI  :  10.3390/s20174731

来源: DOAJ

【 摘 要 】

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

【 授权许可】

Unknown