Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry

Li-Hua Mo¹  Jie Liu¹  You-Mei Sun¹  Bing Ye¹  Tao Liu² 

[1] Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;

关键词: SRAM;    single-event upset;    on-orbit error rate;    low-energy proton;   

DOI  :  10.3390/sym12122030

来源: DOAJ

【 摘 要 】

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

【 授权许可】

Unknown