Soft-error tolerant transistor/magnetic-tunnel-junction hybrid non-volatile C-element

IEICE Electronics Express

Takahiro Hanyu²  Naoya Onizawai¹ 

[1] Frontier Research Institute for Interdisciplinary Sciences, Tohoku University;Research Institute of Electrical Communication, Tohoku University

关键词: single-event upset;    single-event transient;    asynchronous circuits;    spin-torque transfer;   

DOI  :  10.1587/elex.11.20141017

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)Cited-By(1)A C-element is a key storage cell for constructing asynchronous circuits often used for reliable applications. This brief introduces a soft-error tolerant transistor/magnetic-tunnel-junction (MTJ) hybrid non-volatile C-element. To exploit the MTJ devices that are hardly affected by particle strikes in asynchronous circuits, a self-disabled write circuit is proposed that can write data to the MTJ device, asynchronously. The MOS/MTJ hybrid C-element implemented under a 90 nm CMOS/100 nm MTJ technology is simulated using NS-SPICE (SPICE simulator) that handles both transistors and MTJ devices. The simulation results show that the proposed C-element properly operates under a particle strike that induces a charge amount of 50 fC. It is more robust than a triple-modular-redundancy (TMR)-based C-element under particle strikes. In addition, the proposed C-element can be power-gated because of the non-volatility of the MTJ device, reducing the standby current to 0.41% compared to the TMR-based C-element.

【 授权许可】

Unknown