High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Materials

Xiaochen Ma¹  Joshua Wilson¹  Jiawei Zhang¹  Aimin Song¹  Qian Xin²  Jia Yang²  Yunpeng Li² 

[1] School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK;School of Physics, Shandong University, Jinan 250100, China;

关键词: thin-film transistor;    ring oscillators;    IGZO;    SnO;   

DOI  :  10.3390/ma10030319

来源: DOAJ

【 摘 要 】

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

【 授权许可】

Unknown