Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D–A–D Series Compounds

Materials

Xuejing Song¹  Jinsheng Zhao²  Xiangyu Li²  Hongmei Du²  Hanlin Feng²  Lingqian Kong³  Yu Xie⁴ 

[1] College of Chemical Engineering and Energy Technology, Dongguan University of Technology, Dongguan 523100, China;Department of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252059, China;Dongchang College, Liaocheng University, Liaocheng 252059, China;Key Laboratory of Jiangxi Province for Persistant Pollutants Control and Resources Recycle, Nanchang Hangkong University, Nanchang 330063, China;

关键词: pyrazine;    quinoxaline;    benzocarbazole;    donor-acceptor-donor;    photoelectric properties;    electromemory;   

DOI  :  10.3390/ma11102063

来源: DOAJ

【 摘 要 】

Pyrazine derivatives quinoxaline and pyridopyrazine were selected as the acceptors, and benzocarbazole was used as the donor to synthesize four different D–A–D compounds. The results showed that 2,3-bis(decyloxy)pyridine[3,4-b]pyrazine (DPP) exhibited stronger electron-withdrawing ability than that of 2,3-bis(decyloxy)quinoxaline (DPx), because DPP possesses one more nitrogen (N) atom, resulting in a red-shift of the intramolecular charge transfer (ICT) absorption bands and fluorescent emission spectra for compounds with DPP as the acceptor compared with those that use DPx as the acceptor. The band-gap energy (Eg) of the four D–A–D compounds were 2.82 eV, 2.70 eV, 2.48 eV, and 2.62 eV, respectively, for BPC-2DPx, BPC-3DPx, BPC-2DPP, and BPC-3DPP. The solvatochromic effect was insignificant when the four compounds were in the ground state, which became significant in an excited state. With increasing solvent polarity, a 30–43 nm red shift was observed in the emissive spectra of the compounds. The thermal decomposition temperatures of the four compounds between 436 and 453 °C had very high thermal stability. Resistor-type memory devices based on BPC-2DPx and BPC-2DPP were fabricated in a simple sandwich configuration, Al/BPC-2DPx/ITO or Al/BPC-2DPP/ITO. The two devices showed a binary non-volatile flash memory, with lower threshold voltages and better repeatability.

【 授权许可】

Unknown