Isoindigo-Based Small Molecules with Varied Donor Components for Solution-Processable Organic Field Effect Transistor Devices

Molecules

Hemlata Patil⁴  Jingjing Chang¹  Akhil Gupta⁴  Ante Bilic²  Jishan Wu¹  Prashant Sonar³  Sheshanath V. Bhosale⁴ 

[1] Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3, Research Link, Singapore 117602, Singapore; E-Mails:;CSIRO Manufacturing, Virtual Nanoscience Lab, Parkville Victoria 3052, Australia; E-Mail:;School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane QLD 4001, Australia;School of Applied Sciences, RMIT University, GPO Box 2476, Melbourne Victoria 3001, Australia; E-Mail:

关键词: isoindigo;    solution-processable;    organic field effect transistors;    donor-acceptor-donor;    carbazole;    triphenylamine;   

DOI  :  10.3390/molecules200917362

来源: mdpi

【 摘 要 】

Two solution-processable small organic molecules, (E)-6,6′-bis(4-(diphenylamino)phenyl)-1,1′-bis(2-ethylhexyl)-(3,3′-biindolinylidene)-2,2′-dione (coded as S10) and (E)-6,6′-di(9H-carbazol-9-yl)-1,1′-bis(2-ethylhexyl)-(3,3′-biindolinylidene)-2,2′-dione (coded as S11) were successfully designed, synthesized and fully characterized. S10 and S11 are based on a donor-acceptor-donor structural motif and contain a common electron accepting moiety, isoindigo, along with different electron donating functionalities, triphenylamine and carbazole, respectively. Ultraviolet-visible absorption spectra revealed that the use of triphenylamine donor functionality resulted in an enhanced intramolecular charge transfer transition and reduction of optical band gap, when compared with its carbazole analogue. Both of these materials were designed to be donor semiconducting components, exerted excellent solubility in common organic solvents, showed excellent thermal stability, and their promising optoelectronic properties encouraged us to scrutinize charge-carrier mobilities using solution-processable organic field effect transistors. Hole mobilities of the order of 2.2 × 10⁻⁴ cm²/Vs and 7.8 × 10⁻³ cm²/Vs were measured using S10 and S11 as active materials, respectively.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.