Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Âderna Fìzika ta Energetika

卷:16

M. B. Pinkovska¹  V. P. Tartachnyk¹  Ye. V. Malyi¹  V. G. Vorobiov¹  O. V. Konoreva¹  V. V. Shlapatska² 

[1] Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine ;

[2] SE "Radma", L.V. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, Ukraine ;

关键词: gallium phosphide;    GaP;    light-emitting diode;    irradiation;    electrons;    current-voltage characteristics;    reverse current;    breakdown;   

DOI  :  

来源: DOAJ

【 摘 要 】

Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

【 授权许可】

Unknown