PHOTODIODE BASED ON THE EPITAXIAL PHOSPHIDE GALLIUM WITH INCREASED SENSITIVITY AT A WAVELENGTH OF 254 nm

Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska

Olga P. Andreeva¹  Volodymyr M. Lipka¹  Mykola O. Sorokatyi²  Volodymyr V. Strebezhev²  Yurii O. Sorokatyi²  Yurii Dobrovolsky³ 

[1] PJC ”CDB Rhythm”, Chernivtsy;Yuriy Fedkovych Chernivtsi National University;{'en_US': 'Yuriy Fedkovych Chernivtsi National University'};

关键词: photodiode;    gallium phosphide;    sensitive;    254 nm;    Schottky barrier;   

DOI  :  10.35784/iapgos.910

来源: DOAJ

【 摘 要 】

The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.

【 授权许可】

Unknown