Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics

卷:7

Zhang Kai¹  Sun Chi²  Lin Wenkui²  Yu Guohao²  Fu Kai²  Zhang Baoshun²  Shi Fengfeng²  Lu Shulong²  Zhao Yukun²  Zhang Xiaodong²  He Tao³  Zhang Xinping³  Ding Xiaoyu³ 

[1] International Laboratory for Adaptive Bio-nanotechnology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China;

[2] Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China;

[3] School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P.R. China;

关键词: graphene;    heterojunction;    photodetectors;    thermal oxidation;    vertical ga2o3 nanowire arrays;   

DOI  :  10.1515/nanoph-2018-0061

来源: DOAJ

【 摘 要 】

In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

【 授权许可】

Unknown