Two‐dimensional heterostructure promoted infrared photodetection devices

InfoMat

Jie Xiong¹  Chaoyi Yan¹  Yanrong Li¹  Gaofeng Rao¹  Xuepeng Wang¹  Yang Wang¹  Lanxin Xue¹  Chuanhui Gong¹  Peihua Wangyang¹  Junwei Chu¹  Jianwen Huang¹ 

[1] State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu China;

关键词: 2D heterostructure;    graphene;    infrared detection;    photodetectors;    transition metal dichalcogenides;   

DOI  :  10.1002/inf2.12018

来源: DOAJ

【 摘 要 】

Abstract It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

【 授权许可】

Unknown