Nanophotonics | |
Solar-blind ultraviolet photodetector based on graphene/vertical Ga 2 O 3 nanowire array heterojunction | |
article | |
Tao He1  Guohao Yu2  Kai Zhang3  Shulong Lu2  Xinping Zhang1  Baoshun Zhang2  Yukun Zhao2  Xiaodong Zhang2  Wenkui Lin2  Kai Fu2  Chi Sun2  Fengfeng Shi2  Xiaoyu Ding1  | |
[1] School of Materials Science and Engineering, Nanjing University of Science and Technology;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences;International Laboratory for Adaptive Bio-nanotechnology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences;Department of Informatics, Beijing University of Technology | |
关键词: graphene; heterojunction; photodetectors; thermal oxidation; vertical Ga2O3 nanowire arrays; | |
DOI : 10.1515/nanoph-2018-0061 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: De Gruyter | |
【 摘 要 】
In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga 2 O 3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga 2 O 3 nanowire arrays have been realized. Ga 2 O 3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga 2 O 3 nanowires to form the graphene/vertical Ga 2 O 3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×10 4 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga 2 O 3 nanowire array heterojunction structure.
【 授权许可】
CC BY
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