Solar-blind ultraviolet photodetector based on graphene/vertical Ga 2 O 3 nanowire array heterojunction

Nanophotonics

article

Tao He¹  Guohao Yu²  Kai Zhang³  Shulong Lu²  Xinping Zhang¹  Baoshun Zhang²  Yukun Zhao²  Xiaodong Zhang²  Wenkui Lin²  Kai Fu²  Chi Sun²  Fengfeng Shi²  Xiaoyu Ding¹ 

[1] School of Materials Science and Engineering, Nanjing University of Science and Technology;Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences;International Laboratory for Adaptive Bio-nanotechnology, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences;Department of Informatics, Beijing University of Technology

关键词: graphene;    heterojunction;    photodetectors;    thermal oxidation;    vertical Ga2O3 nanowire arrays;   

DOI  :  10.1515/nanoph-2018-0061

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga 2 O 3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga 2 O 3 nanowire arrays have been realized. Ga 2 O 3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga 2 O 3 nanowires to form the graphene/vertical Ga 2 O 3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×10 4 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga 2 O 3 nanowire array heterojunction structure.

【 授权许可】

CC BY