Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature

Krukovskii R. S.¹  Avksent'ev A. Yu.¹  Larkin S. Yu.¹  Krukovskii S. I.²  Vakiv N. M.² 

[1] Ukraine, Kiev, Scientific-production concern "Nauka";

[2] Ukraine, Lviv, Scientific and production enterprise subsidiary enterprise "Karat" JSC concern “Electron”;

关键词: epitaxial layer;    gallium arsenide;    MOCVD;    heteroboundary;    rare-earth element;    doping;   

DOI  :  10.15222/TKEA2014.2.61

来源: DOAJ

【 摘 要 】

The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of continuous growth at changing crystallization temperature from 600—700°C has been developed. It has been determined that the crystallization of p+-AlGaAs: Zn solid solution layer on the surface of n-GaAs:Si layer, with increasing the crystallization temperature in the temperature range of 600—760°C at a rate 8—10 °C/min allows to crystallize sharp impurity boundary between the layers of p- and n-type conductivity. The method of forming sharp hetero boundaries in p-GaAs:Zn/n-GaAs:Si systems can be used for manufacturing wide range of epitaxial structures.

【 授权许可】

Unknown