Special Issue “Fundamentals and Recent Advances in Epitaxial Graphene on SiC”

Applied Sciences

卷:11

Rositsa Yakimova¹  Ivan Shtepliuk¹ 

[1] Semiconductor Materials, Department of Physics, Chemistry and Biology-IFM, Linköping University, SE-58183 Linköping, Sweden;

关键词: epitaxial graphene;    sublimation;    SiC;    buffer layer;    electronic properties;    material engineering;   

DOI  :  10.3390/app11083381

来源: DOAJ

【 摘 要 】

The aim of this Special Issue is to provide a scientific platform for recognized experts in the field of epitaxial graphene on SiC to present their recent studies towards a deeper comprehension of growth mechanisms, property engineering and device processing. This Special Issue gives readers the possibility to gain new insights into the nature of buffer layer formation, control of electronic properties of graphene and usage of epitaxial graphene as a substrate for deposition of different substances, including metals and insulators. We believe that the papers published within the current Special Issue develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic practical applications.

【 授权许可】

Unknown