Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Nano-Micro Letters

Shuai Yan¹  Shilong Lv¹  Sannian Song¹  Zhitang Song¹  Yuan Xue¹ 

[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, People’s Republic of China;

关键词: Phase-change memory;    High speed;    Ta;    High-temperature operation;   

DOI  :  10.1007/s40820-020-00557-4

来源: Springer

【 摘 要 】

tsPhase-change memory based on Ta-doped antimony telluride (Sb2Te) exhibits both high-speed characteristics and excellent high-temperature characteristics, allowing improved performance and new applications.The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms enhance the robustness of the amorphous structure, ensuring good thermal stability.Through the three-dimensional limit, the formation of small grains reduces the power consumption and improves the long-term endurance.

【 授权许可】

CC BY