Mid-infrared integrated photonics on silicon: a perspective

Nanophotonics

article

Hongtao Lin¹  Zhengqian Luo¹  Tian Gu²  Lionel C. Kimerling¹  Kazumi Wada¹  Anu Agarwal²  Juejun Hu¹ 

[1] Department of Materials Science and Engineering, Massachusetts Institute of Technology;Materials Processing Center, Massachusetts Institute of Technology;Department of Electronic Engineering, Xiamen University

关键词: mid-IR;    integrated photonics;    silicon photonics;    spectrometer;    optical sensor;   

DOI  :  10.1515/nanoph-2017-0085

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

【 授权许可】

CC BY