Sensitivity Comparison of Integrated Mid-Infrared Silicon-Based Photonic Detectors

Proceedings

Tortschanoff, Andreas¹  Consani, Cristina²  Ranacher, Christian³  Söllradl, Thomas⁴  Rauter, Lukas⁵ 

[1] Author to whom correspondence should be addressed.;CTR Carinthian Tech Research AG, 9524 Villach, Austria;Infineon Technologies Austria AG, 9500 Villach, Austria;Institute for Microelectronics and Microsensors, Johannes Kepler University Linz, 4040 Linz, Austria;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: silicon photonics;    mid-infrared detectors;    cavity-enhanced resonant detector;    integrated photonics;   

DOI  :  10.3390/proceedings2130796

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Integrated silicon photonics in the mid-infrared is a promising platform for cheap and miniaturized chemical sensors, including gas and/or liquid sensors for environmental monitoring and the consumer electronics market. One major challenge in integrated photonics is the design of an integrated detector sensitive enough to detect minimal changes in light intensity resulting from, for example, the absorption by the analyte. Further complexity arises from the need to fabricate such detectors at a high throughput with high requirements on fabrication tolerances. Here we analyze and compare the sensitivity of three different chip-integrated detectors at a wavelength of 4.17 µm, namely a resistance temperature detector (RTD), a diode and a vertical-cavity enhanced resonant detector (VERD).

【 授权许可】

CC BY