Nanophotonics | |
Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators | |
article | |
Marco Passoni1  Dario Gerace1  Liam O’Faolain2  Lucio Claudio Andreani1  | |
[1] Department of Physics, University of Pavia;Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology;CNR-IFN | |
关键词: silicon photonics; optical modulators; slow light; | |
DOI : 10.1515/nanoph-2019-0045 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: De Gruyter | |
【 摘 要 】
Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20–30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.
【 授权许可】
CC BY
【 预 览 】
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RO202107200003565ZK.pdf | 643KB | download |