Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

Advanced Science

Shanliang Chen²  Minghui Shang²  Fengmei Gao²  Lin Wang²  Pengzhan Ying¹  Weiyou Yang² 

[1] School of Material Science and Engineering, China University of Mining and Technology, Xuzhou City, P.R. China;Institute of Materials, Ningbo University of Technology, Ningbo City, P.R. China

关键词: field emitters;    flexible devices;    low turn‐on fields;    P‐doped SiC;    stable current emission;   

DOI  :  10.1002/advs.201670002

来源: Wiley

【 摘 要 】

Abstract

Novel, P-doped, flexible SiC field emitters, with both low turn-on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co-workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices.

【 授权许可】

CC BY-NC   
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.