Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Advanced Science

Shanliang Chen²  Minghui Shang²  Fengmei Gao²  Lin Wang²  Pengzhan Ying¹  Weiyou Yang² 

[1] School of Material Science and Engineering, China University of Mining and Technology, Xuzhou City, P.R. China;Institute of Materials, Ningbo University of Technology, Ningbo City, P.R. China

关键词: field emitters;    flexible devices;    low turn‐on fields;    P‐doped SiC;    stable current emission;   

DOI  :  10.1002/advs.201500256

来源: Wiley

【 摘 要 】

Abstract

Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E_to of 1.03–0.73 Vμm⁻¹ up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%).

【 授权许可】

CC BY   
© 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.