Al-doped ZnS thin films for buffer layers of solar cells prepared by chemical bath deposition

Micro & nano letters

article

Jie Liao¹  Shuying Cheng¹  Haifang Zhou²  Bo Long² 

[1] State Key Laboratory Breeding Base of Photocatalysis, and College of Chemistry and Chemical Engineering, Fuzhou University;Institute of Micro-Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University

关键词: aluminium;    annealing;    buffer layers;    doping profiles;    electrical resistivity;    energy gap;    Fourier transform spectra;    II-VI semiconductors;    infrared spectra;    liquid phase deposition;    Raman spectra;    semiconductor growth;    semiconductor thin films;    wide band gap semiconductors;    X-ray diffraction;    zinc compounds;    thin film composition;    buffer layers;    solar cells;    chemical bath deposition;    alkaline condition;    stable complexing agent;    sodium citrate;    ammonia-ammonium chloride buffer solution;    thin film structure;    X-ray diffraction;    Fourier transform infrared spectra;    Raman spectroscopy;    XRD;    FTIR spectra;    optical characteristics;    bandgap;    doping concentration;    electrical resistivity;    annealing;    ZnSAl;    aluminium;    annealing;    buffer layers;    doping profiles;    electrical resistivity;    energy gap;    Fourier transform spectra;    II-VI semiconductors;    infrared spectra;    liquid phase deposition;    Raman spectra;    semiconductor growth;    semiconductor thin films;    wide band gap semiconductors;    X-ray diffraction;    zinc compounds;    thin film composition;    buffer layers;    solar cells;    chemical bath deposition;    alkaline condition;    stable complexing agent;    sodium citrate;    ammonia-ammonium chloride buffer solution;    thin film structure;    X-ray diffraction;    Fourier transform infrared spectra;    Raman spectroscopy;    XRD;    FTIR spectra;    optical characteristics;    bandgap;    doping concentration;    electrical resistivity;    annealing;    ZnSAl;   

DOI  :  10.1049/mnl.2013.0039

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

In this reported study, Al-doped ZnS (ZnS:Al) thin films were fabricated by chemical bath deposition in alkaline condition along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride buffer solution. Al concentrations were varied from 0 to 10 at.%. The structure and composition of the films were confirmed by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra and Raman spectroscopy. The XRD, FTIR and Raman spectra confirmed the existence of ZnS and Al–S bond, which had some effects on the properties of the films. The optical characteristics indicated the changes of the bandgap with the Al-doping concentrations. The resistivity of the ZnS:Al films with different Al-doping concentrations after annealing was analysed and the sample with 6 at.% Al concentration had the lowest resistivity of 9.9 × 104 Ω cm.

【 授权许可】

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