Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted-annealed copper

Micro & nano letters

article

Anousheh Kazemeini-Asl¹  Majdid M. Larijani²  Vahid Fathollahi³ 

[1] Department of Physics, Karaj Branch, Islamic Azad University;Nuclear Science and Technology Research Institute (NSTRI);Nuclear Science Research School

关键词: nitrogen;    copper;    metallic thin films;    nanostructured materials;    sputter deposition;    ion implantation;    annealing;    X-ray diffraction;    atomic force microscopy;    field emission electron microscopy;    scanning electron microscopy;    doping profiles;    solid-state phase transformations;    electrical resistivity;    ion dose;    nanostructure morphology;    nitrogen implanted-annealed copper;    thin films;    sputter coating;    single silicon crystals;    nitrogen atmosphere;    grazing incidence X-ray diffraction;    crystalline copper nitride phase;    copper azides;    nitrogen ion implantation;    structural properties;    sheet resistance;    atomic force microscopy;    field emission scanning electron microscopy;    four-point probe techniques;    electrical resistivity;    electron volt energy 30 keV;    CuN;    Si;   

DOI  :  10.1049/mnl.2014.0287

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Technological advances are leading to the possibility of remotely controlled or veven completely autonomous delivery of anesthesia. Advances in other specialties, as well as the paradigm shift towards functional medicine, are promising improvement in overall state of health, and reducing the numbers and types of surgical procedures, thereby reducing the required numbers of the relevant workforce, including anesthetists, in future. The specialty of anesthesia needs to transform into a more over-arching role of perioperative medicine in order to stay relevant.

【 授权许可】

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