Photoresponse properties of p-type ZnSe nanowire photodetectors

Micro & nano letters

article

Shanying Li¹  Qing Su¹  Haipeng Zhao¹ 

[1] School of Chemical and Material Engineering, Henan University of Urban Construction

关键词: crystal defects;    energy states;    II-VI semiconductors;    nanowires;    photodetectors;    reliability;    semiconductor quantum wires;    wide band gap semiconductors;    zinc compounds;    ZnSe;    optoelectronic nanodevice;    reliability;    recombination;    defects;    bandgap;    energy levels;    incident light intensity;    photoconduction;    light-to-dark currents ratio;    response speed;    individual p-type ZnSe nanowire;    nanophotodetectors;    p-type ZnSe nanowire photodetectors;    photoresponse properties;   

DOI  :  10.1049/mnl.2013.0085

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Like most of other countries, Covid-19 has hit us very hard and healthcare staff across the country has been on their toes right from the day one. In the ongoing fight many of our doctors, nurses and paramedical staff also contracted the disease and many of them even lost their lives.  16th June 2020 was the saddest day, when the medical community heard the tragic news of demise of their ever-smiling, beloved Professor Dr. Abbas Tariq after being hospitalized for five days.

【 授权许可】

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