New folding lateral double diffused metal oxide semiconductor breaking silicon limit with ultra-low specific on-resistance

Micro & nano letters

article

Baoxing Duan¹  Chunlai Li¹  Jianchong Ma¹  Song Yuan¹  Yintang Yang¹ 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: silicon;    elemental semiconductors;    MIS structures;    electrical resistivity;    electric breakdown;    lateral double diffused metal oxide semiconductor;    specific on-resistance;    LDMOS;    step oxide layer;    folding silicon substrate;    electric field modulation;    majority carrier accumulation;    breakdown voltage;    extended gate;    on-state operation;    high-doping drift region;    uniform lateral electric field;    silicon limit relationship;    voltage 62 V;    Si;    Si;   

DOI  :  10.1049/mnl.2015.0413

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Cornelia de Lange syndrome presents with various problems which include anatomical anomalies of face and extremities, cardiopulmonary and endocrine disorders, renal dysfunction, epileptic EEG waves, and mental retardation. Difficult airway and aspiration risk due to gastroesophageal reflux and poor esophageal motility are the main challenges in anesthesia management. The choice of anesthetic procedure must be carefully considered in view of these abnormalities. We report a 14years old male child who was a known case of Cornelia De Lange Syndrome for dental extraction with restorations under general anesthesia. The uneventful course of the anesthesia in the presented case was due to the thorough systemic evaluation and careful anesthetic strategy.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND