Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

Micro & nano letters

article

Haidong Lu¹  Fangmin Guo¹  Bing Zhang¹  Wenguo Ning¹ 

[1] School of Information Science Technology, East China Normal University

关键词: optical storage;    semiconductor quantum dots;    semiconductor quantum wells;    gallium arsenide;    indium compounds;    III-V semiconductors;    energy gap;    photoconductivity;    semiconductor diodes;    electron-hole recombination;    optical storage behaviour;    quantum well structure;    quantum dot device;    capacitance-voltage character;    current-voltage character;    C-V character;    I-V character;    electron-hole separation;    optical excitation;    photon energy;    energy gap;    pulsed photovoltage-photocurrent response ratio;    photonic memory cell;    InAs-GaAs;   

DOI  :  10.1049/mnl.2016.0339

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

The optical storage behaviour of InAs quantum dots (QDs) device has been investigated by testing capacitance–voltage (C–V ) and current– voltage (I–V ) character. Since QDs are embedded in the GaAs quantum well, it can be charged by the spatial separation of electrons and holes. When the device is biased in a storage mode, the optical excitation with the photon energy larger than the energy gap gives rise to a step jump in the responsive current, which is previously stored in the device during the illumination. The holes in the QDs which represent the stored information are storage and deletion by bias. The storage time is on the order of milliseconds as measured by pulsed photovoltage/photocurrent response ratio of the device. The device structure can be used as a photonic memory cell because of long storage time and fast retrieval of photons. Moreover, the memory operation can be carried out by applying a lower voltage.

【 授权许可】

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