Performance investigation of hetero material (InAs/Si)-based charge plasma TFET

Micro & nano letters

article

Dharmendra Singh Yadav¹  Dheeraj Sharma¹  Ashish Kumar¹  Deepak Rathor¹  Rahul Agrawal¹  Sukeshni Tirkey¹  Bhagwan Ram Raad¹  Varun Bajaj¹ 

[1] Electronics and Communication Engineering Discipline, PDPM-Indian Institute of Information Technology

关键词: tunnel transistors;    field effect transistors;    III-V semiconductors;    semiconductor junctions;    narrow band gap semiconductors;    low-power electronics;    indium compounds;    elemental semiconductors;    InAs-Si;    drain to source voltage;    channel length variation effect;    gain-bandwidth product;    cut-off frequency;    gate-to-drain capacitance;    transconductance;    transfer characteristics;    H-CPTFET;    hetero junction charge plasma TFET;    ON-state current;    band-to-band tunnelling generation rate;    source-channel junction;    source-channel interface;    lateral tunnelling distance reduction;    source region;    narrow bandgap material;    device performance enhancement;    CPTFET;    ultra-low-power applications;    tunnel held-effect transistor;    hetero material-based charge plasma TFET;   

DOI  :  10.1049/mnl.2016.0688

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Airway management is one of the most important routine tasks performed by an anesthesiologist. Adept airwaymanagement is an essential skill for an anesthesiologist. Although practice guidelines and algorithms may help insuch situations, but vigilance and a timely decision remain all important in such a situation. We encountered apatient with a rapidly enlarging subscapular mass due to which maintenance of supine position on the operatingtable for laryngoscopy and intubation was almost impossible. We had little options for airway managementduring general anesthesia in this patient. We present our method of successful management in this case andreiterate the role of different methods of correct positioning and intubation in such circumstances.

【 授权许可】

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