Street nanotexturing of n-GaN for enhancing light extraction in GaN LEDs

Micro & nano letters

article

Chia-Liang Hsu¹  Amarendra Kumar¹  Kunal Kashyap¹  Max Ti-Kuang Hou²  Jer-Liang Andrew Yeh³ 

[1] Institute of Nano Engineering and Microsystems, National Tsing Hua University;Department of Mechanical Engineering, National United University;Institute of Nano Engineering and Microsystems, National Tsing Hua University and the Instrument Technology Research Center, National Applied Research Laboratories

关键词: gallium compounds;    III-V semiconductors;    wide band gap semiconductors;    light emitting diodes;    street nanotexturing;    GaN LEDs;    light-emitting diodes;    light extraction;    n-gallium nitride layer;    current–voltage characteristics;    current 120 mA;    GaN;   

DOI  :  10.1049/mnl.2016.0701

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Postoperative shivering and feeling of cold associated with it is rated as worse than pain by some patients. It has been a problem not only after general anesthesia, but also during and after spinal anesthesia. This editorial compliments an original article in this issue of ‘Anesthesia, Pain & Intensive Care’ on comparison of three different drugs for the treatment of postoperative shivering, and draws attention towards pathogenesis of shivering and its control. Shivering is not a point in time event and its cessation with pharmacological intervention does not guarantee against its recurrence.

【 授权许可】

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