Effect of high- k dielectric on the performance of Si, InAs and CNT FET

Micro & nano letters

article

Bhubon Chandra Mech¹  Jitendra Kumar¹ 

[1] Department of Electronics Engineering, Indian Institute of Technology (ISM)

关键词: high-k dielectric thin films;    silicon;    elemental semiconductors;    indium compounds;    carbon nanotube field effect transistors;    silicon compounds;    alumina;    hafnium compounds;    lanthanum compounds;    titanium compounds;    Green's function methods;    La2O3;    TiO2;    HfO2;    Al2O3;    SiO2;    Si;    InAs;    frequency 7 GHz to 9 GHz;    time 13.5 fs to 12.5 fs;    cut-off frequency;    switching time;    gate capacitance;    transconductance;    drain-induced barrier lowering;    subthreshold swing;    nonequilibrium Green's function formalism;    carbon nanotube FETs;    GAA NWFET;    silicon gate all around FET;    double gate field-effect transistor;    channel materials;    SCEs;    short channel effects;    gate dielectric selection;    CNT FET;    high-k dielectric effect;   

DOI  :  10.1049/mnl.2017.0088

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Postoperative pain and the associated potential adverse effects have been a major concern for the anesthesiologists since the advent of the practice of anesthesiology. The optimal means of providing postoperative analgesia in the pediatric patient has been a challenging task, and various combinations have been tried to lessen the side effects. Regional techniques in pediatric population have seen some crests in popularity in the past but the use of ultrasound and MRI guidance has added precision in the techniques and boosted confidence of the anesthesiologists. Transversus abdominis plane or TAP block has now made its way into the pediatric population and this editorial provided a supplementary source of information to the a review article and two case reports on similar topic in this issue of Anesthesia, Pain & Intensive Care.

【 授权许可】

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