Evaluation of static noise margin of 6T SRAM cell using SiGe/SiC asymmetric dual- k spacer FinFETs

Micro & nano letters

article

Maisagalla Gopal¹  Vishal Sharma¹  Santosh K. Vishvakarma¹ 

[1] Discipline of Electrical Engineering, Indian Institute of Technology

关键词: Ge-Si alloys;    silicon compounds;    semiconductor materials;    MOSFET;    SRAM chips;    carrier mobility;    semiconductor device noise;    static noise margin;    FinFET-based 6T SRAM bit cell;    asymmetric dual-k spacer FinFETs;    Fin-field-effect transistor;    strain-induced mobility enhancement;    read–write conflict;    temperature sensitivity;    cell stability;    SiGe−SiC;   

DOI  :  10.1049/mnl.2017.0318

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Juvenile myelomonocytic leukaemia (JMML) is an aggressive clonal haematopoietic disorder that presents in early childhood. It is classified by the World Health Organization (WHO) as an overlap myeloproliferative or myelodysplastic disorder. The pathogenesis of JMML has been well-explained at the molecular level using clear diagnostic criteria. There is limited literature on JMML in the context of HIV infection. The only curative modality for the majority of patients with JMML is allogeneic haematopoietic stem cell transplant (HSCT). The role of other chemotherapeutic approaches is to ameliorate the disease but they are no substitute for allogeneic HSCT. We report a case of a 59-month-old child with vertically transmitted HIV-infection who was referred to the authors’ institution for further management.

【 授权许可】

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