Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

Micro & nano letters

article

Sarthak Gupta¹  Dheeraj Sharma¹  Deepak Soni¹  Shivendra Yadav¹  Mohd. Aslam¹  Dharmendra Singh Yadav¹  Kaushal Nigam¹  Neeraj Sharma² 

[1] Nanoelectronics and VLSI Lab, Electronics and Communication Engineering Discipline, PDPM Indian Institute of Information Technology;Department of Computer Engineering, Ramrao Adik Institute of Technology

关键词: dielectric materials;    interface states;    semiconductor device reliability;    field effect transistors;    tunnel transistors;    semiconductor device breakdown;    carrier density;    ITCs;    HD DMCG-TFET;    interface trap charges;    dual material control gate tunnel field effect transistor;    dual metal control gate tunnel field effect transistors;    semiconductor/insulator interface;   

DOI  :  10.1049/mnl.2017.0869

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Over the past few decades, the global usage and applications of different kinds of complementary and alternative medicine are greatly exaggerated among the general population, this requires improving the knowledge of all health care provider including pharmacists toward proper and safe use of different complementary and alternative medicine modalities. The current study aims to assess the Iraqi pharmacists' knowledge, use, and recommendation toward complementary and alternative medicine A cross-sectional pilot survey was done on a convenient sample of Iraqi pharmacists. Data were collected using a pretested.

【 授权许可】

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