Double-layer resist method to improve descum result when removing negative photoresist

Micro & nano letters

article

Zheng Yang¹  Qiusen Wang¹  Liping Qi²  Xing Wang¹  Kehong Li¹  Da Chen¹  Chen Li¹  Helin Zou¹ 

[1] Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology;School of Biomedical Engineering, Dalian University of Technology

关键词: photoresists;    viscosity;    etching;    negative photoresist scum;    low viscosity positive photoresist;    AZ703;    double-layer resist method;    optimal retracting distance;    bottom layer resist;    top layer resist;    top layer contact;    size 8.0 mum;    size 1.10 mum;   

DOI  :  10.1049/mnl.2018.5689

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A novel double-layer resist method was presented in this work to decrease the negative photoresist scum. Positive photoresist was chosen as the bottom layer resist and negative photoresist as the top layer resist. This work studied the effect of viscosity and thickness of bottom layer resist on the mean number of scum. The experiment shows that the low viscosity positive photoresist AZ703, with the spin speed of 3000 r/min and the thickness of 1.10 um, had prominent effect on the removal of photoresist. To minimise the area of the top layer contact with substrate and further reduce the scum, 8 µm was selected as the optimal retracting distance d of the bottom layer resist.

【 授权许可】

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